Preparation and cutting performance of nano-scaled Al2O3-coated micro-textured cutting tool prepared by atomic layer deposition
نویسندگان
چکیده
منابع مشابه
High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 ± 0.2 cm/V s and 0.9 ± 0.1 cm/V s were obtained when using heavily n-doped silicon (n-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-...
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ژورنال
عنوان ژورنال: High Temperature Materials and Processes
سال: 2021
ISSN: 2191-0324,0334-6455
DOI: 10.1515/htmp-2021-0021